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SSM3J120TU(TE85L) PDF预览

SSM3J120TU(TE85L)

更新时间: 2024-11-20 20:07:07
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 178K
描述
MOSFETs Vds=-20V Id=-4A 3Pin

SSM3J120TU(TE85L) 技术参数

生命周期:Not RecommendedReach Compliance Code:unknown
Factory Lead Time:12 weeks风险等级:5.56
Base Number Matches:1

SSM3J120TU(TE85L) 数据手册

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SSM3J120TU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
SSM3J120TU  
Power Management Switch Applications  
High-Current Switching Applications  
Unit: mm  
1.5 V drive  
Low on-resistance  
2.1±0.1  
1.7±0.1  
R
on  
R
on  
R
on  
R
on  
= 140 m(max) (@V  
= -1.5 V)  
GS  
= 78 m(max) (@V  
= 49 m(max) (@V  
= 38 m(max) (@V  
= -1.8 V)  
= -2.5 V)  
= -4.0 V)  
GS  
GS  
GS  
1
2
Absolute Maximum Ratings (Ta = 25°C)  
3
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
-20  
± 8  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
-4.0  
-8.0  
800  
D
Drain current  
A
Pulse  
I
DP  
P
P
(Note 1)  
(Note 2)  
D
D
Drain power dissipation  
mW  
500  
150  
1. Gate  
Channel temperature  
Storage temperature  
T
°C  
°C  
2. Source  
3. Drain  
ch  
T
stg  
55~150  
UFM  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
2-2U1A  
Weight: 6.6mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note 1 : Mounted on ceramic board  
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2)  
Note 2 : Mounted on FR4 board  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= −1 mA, V  
= −1 mA, V  
= 0  
20  
12  
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
= +8 V  
Drain cut-off current  
I
V
V
V
V
= 20 V, V  
= 0  
10  
±1  
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ±8 V, V = 0  
DS  
= −3 V, I = −1 mA  
V
0.3  
6.1  
1.0  
th  
D
Y ⏐  
= -3 V, I = -2.0 A  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
12.1  
28  
S
fs  
D
I
I
I
I
= -3.0 A, V  
= -2.0 A, V  
= -1.0 A, V  
= -0.3 A, V  
= -4.0 V  
= -2.5 V  
= -1.8 V  
= -1.5 V  
38  
D
D
D
D
GS  
GS  
GS  
GS  
34  
49  
Drain-Source ON-resistance  
R
mΩ  
DS (ON)  
47  
78  
60  
140  
Input capacitance  
C
1484  
185  
169  
67  
pF  
pF  
pF  
iss  
V
= −10 V, V  
= 0  
GS  
DS  
Output capacitance  
C
oss  
f = 1 MHz  
Reverse transfer capacitance  
C
rss  
on  
Turn-on time  
Switching time  
t
t
V
V
= −10 V, I = −2.0 A  
D
DD  
GS  
ns  
= 0 ~ 2.5 V, R = 4.7 Ω  
Turn-off time  
92  
G
off  
1
2007-11-01  

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