SSM3J120TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J120TU
○Power Management Switch Applications
○High-Current Switching Applications
Unit: mm
•
•
1.5 V drive
Low on-resistance
2.1±0.1
1.7±0.1
R
on
R
on
R
on
R
on
= 140 mΩ (max) (@V
= -1.5 V)
GS
= 78 mΩ (max) (@V
= 49 mΩ (max) (@V
= 38 mΩ (max) (@V
= -1.8 V)
= -2.5 V)
= -4.0 V)
GS
GS
GS
1
2
Absolute Maximum Ratings (Ta = 25°C)
3
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
-20
± 8
V
V
DS
Gate-Source voltage
V
GSS
DC
I
-4.0
-8.0
800
D
Drain current
A
Pulse
I
DP
P
P
(Note 1)
(Note 2)
D
D
Drain power dissipation
mW
500
150
1. Gate
Channel temperature
Storage temperature
T
°C
°C
2. Source
3. Drain
ch
T
stg
−55~150
UFM
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
―
TOSHIBA
2-2U1A
Weight: 6.6mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1 : Mounted on ceramic board
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2)
Note 2 : Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
V
I
I
= −1 mA, V
= −1 mA, V
= 0
−20
−12
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-Source breakdown voltage
= +8 V
Drain cut-off current
I
V
V
V
V
= −20 V, V
= 0
⎯
−10
±1
μA
μA
V
DSS
GSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±8 V, V = 0
⎯
⎯
DS
= −3 V, I = −1 mA
V
−0.3
6.1
⎯
⎯
−1.0
⎯
th
D
⏐Y ⏐
= -3 V, I = -2.0 A
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
12.1
28
S
fs
D
I
I
I
I
= -3.0 A, V
= -2.0 A, V
= -1.0 A, V
= -0.3 A, V
= -4.0 V
= -2.5 V
= -1.8 V
= -1.5 V
38
D
D
D
D
GS
GS
GS
GS
⎯
34
49
Drain-Source ON-resistance
R
mΩ
DS (ON)
⎯
47
78
⎯
60
140
⎯
Input capacitance
C
⎯
1484
185
169
67
pF
pF
pF
iss
V
= −10 V, V
= 0
GS
DS
Output capacitance
C
⎯
⎯
oss
f = 1 MHz
Reverse transfer capacitance
C
⎯
⎯
rss
on
Turn-on time
Switching time
t
t
⎯
⎯
V
V
= −10 V, I = −2.0 A
D
DD
GS
ns
= 0 ~ −2.5 V, R = 4.7 Ω
Turn-off time
92
G
⎯
⎯
off
1
2007-11-01