是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.75 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM3J09FUTE85L | TOSHIBA |
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200mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
SSM3J108TU | TOSHIBA |
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Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications | |
SSM3J108TU(TE85L) | TOSHIBA |
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MOSFETs Vds=-20V Id=-1.8A 3Pin | |
SSM3J108TU(TE85L,F) | TOSHIBA |
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Small Signal Field-Effect Transistor | |
SSM3J108TU,LF(T | TOSHIBA |
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Small Signal Field-Effect Transistor, 1.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
SSM3J109TU | TOSHIBA |
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Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications Hi | |
SSM3J109TU,LF(T | TOSHIBA |
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Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-O | |
SSM3J110TU | TOSHIBA |
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Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications | |
SSM3J111TU | TOSHIBA |
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Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications | |
SSM3J112TU | TOSHIBA |
获取价格 |
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications |