Datasheet > SSM3J09FU,LF

SSM3J09FU,LF

更新时间： 2024-11-20 19:52:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	211K
描述
Small Signal Field-Effect Transistor

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中文翻译

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技术参数
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SSM3J09FU,LF 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.75	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SSM3J09FU,LF 数据手册

SSM3J09FU

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J09FU

Management Switch

Unit: mm

High Speed Switching Applications

•

Small package

Low on resistance: R = 2.7 Ω (max) (@V

= −10 V)

= −4 V)

: R = 4.2 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

−30

±20

Gate-Source voltage

GSS

−200

Drain current

Pulse

−400

Drain power dissipation (Ta = 25°C)

Channel temperature

(Note 1)

150

°C

150

JEDEC

JEITA

―

Storage temperature

−55 to 150

°C

stg

SC-70

2-2E1E

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

Weight: 0.006 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm²× 3) Figure 1.

Marking

Equivalent Circuit

(top view)

Figure 1: 25.4 mm

× 25.4 mm × 1.6 t,

Cu Pad: 0.6 mm²× 3

0.6 mm

1.0 mm

D K

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

Start of commercial production

2000-01

2014-03-01

12 3 4 5

中文翻译

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