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SSM3J108TU,LF(T

更新时间： 2024-02-03 16:36:32
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关晶体管场效应晶体管
页数 文件大小 规格书
5页 143K
描述
Small Signal Field-Effect Transistor, 1.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET

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SSM3J108TU,LF(T 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknown风险等级：5.72
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：1.8 A最大漏源导通电阻：0.158 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SSM3J108TU,LF(T 数据手册

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SSM3J108TU  
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type  
SSM3J108TU  
High Speed Switching Applications  
•
1.8V drive  
Unit: mm  
•
Low on-resistance:  
R
on  
R
on  
R
on  
= 363mΩ (max) (@V  
= 230mΩ (max) (@V  
= 158mΩ (max) (@V  
= −1.8 V)  
= −2.5 V)  
= −4.0 V)  
GS  
GS  
GS  
2.1±0.1  
1.7±0.1  
Absolute Maximum Ratings (Ta = 25°C)  
1
2
3
Characteristic  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
−20  
± 8  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
−1.8  
−3.6  
800  
D
Drain current  
A
Pulse  
I
DP  
P
P
D (Note 1)  
D (Note 2)  
Drain power dissipation  
Channel temperature  
mW  
500  
T
150  
°C  
°C  
ch  
1: Gate  
Storage temperature range  
T
−55~150  
stg  
2: Source  
3: Drain  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
UFM  
JEDEC  
JEITA  
―
―
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
TOSHIBA  
2-2U1A  
Weight: 6.6 mg (typ.)  
Note 1: Mounted on ceramic board.  
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 )  
Note 2: Mounted on FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= −1 mA, V  
= −1 mA, V  
= 0  
−20  
−12  
⎯
⎯
⎯
⎯
⎯
⎯
(BR) DSS  
(BR) DSX  
D
D
GS  
Drain-Source breakdown voltage  
= +8 V  
GS  
Drain cut-off current  
I
V
V
V
V
= −20 V, V = 0  
GS  
−10  
μA  
μA  
V
DSS  
DS  
GS  
DS  
DS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ±8V, V = 0  
⎯
−0.3  
1.9  
⎯
⎯
⎯
±1  
−1.0  
⎯
GSS  
DS  
V
= −3 V, I = −1 mA  
th  
D
⏐Y ⏐  
= −3 V, I =− 0.8 A  
(Note3)  
(Note3)  
3.2  
125  
S
fs  
D
I
= −0.8 A, V  
= −4.0 V  
158  
D
GS  
Drain-Source on-resistance  
R
mΩ  
DS (ON)  
I
I
= −0.4 A, V  
= −0.1 A, V  
= −2.5 V  
= −1.8 V  
(Note3)  
(Note3)  
⎯
⎯
170  
230  
230  
363  
D
D
GS  
GS  
Input capacitance  
C
V
V
V
= −10 V, V  
= −10 V, V  
= −10 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
⎯
⎯
⎯
⎯
⎯
⎯
250  
45  
⎯
⎯
⎯
⎯
pF  
pF  
iss  
DS  
DS  
DS  
GS  
GS  
GS  
Output capacitance  
C
oss  
pF  
Reverse transfer capacitance  
C
35  
rss  
on  
Turn-on time  
Switching time  
t
t
12  
V
V
= −10 V, I = −0.25 A,  
D
= 0~−2.5 V, R = 4.7 Ω  
DD  
GS  
ns  
V
G
Turn-off time  
18  
⎯
off  
Drain-Source forward voltage  
Note3: Pulse test  
V
I
= 1.8A, V = 0 V  
GS  
(Note3)  
0.85  
1.2  
DSF  
D
1
2007-11-01  
12345

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