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SSM3J09FU(T5LPED,F

更新时间： 2024-11-21 06:11:35
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 211K
描述
Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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SSM3J09FU(T5LPED,F 数据手册

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SSM3J09FU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
SSM3J09FU  
Management Switch  
Unit: mm  
High Speed Switching Applications  
•
•
Small package  
Low on resistance: R = 2.7 Ω (max) (@V  
= −10 V)  
= −4 V)  
on  
GS  
GS  
: R = 4.2 Ω (max) (@V  
on  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
−30  
±20  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
−200  
D
Drain current  
mA  
Pulse  
I
−400  
DP  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
(Note 1)  
150  
mW  
°C  
D
T
ch  
150  
JEDEC  
JEITA  
―
Storage temperature  
T
−55 to 150  
°C  
stg  
SC-70  
2-2E1E  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
Weight: 0.006 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on FR4 board  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3) Figure 1.  
Marking  
Equivalent Circuit  
(top view)  
Figure 1: 25.4 mm  
× 25.4 mm × 1.6 t,  
Cu Pad: 0.6 mm2 × 3  
3
3
0.6 mm  
1.0 mm  
D K  
1
2
1
2
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is  
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
Start of commercial production  
2000-01  
1
2014-03-01  
12345

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