Datasheet > SSM3J01F(TE85L,F)

SSM3J01F(TE85L,F)

更新时间： 2024-11-20 21:21:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	332K
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SSM3J01F(TE85L,F)

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SSM3J01F(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.83	Base Number Matches：	1

SSM3J01F(TE85L,F) 数据手册

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SSM3J01F

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J01F

High Speed Switching Applications

Unit: mm

•

Small package

Low on resistance: Ron = 0.4 Ω (max) (V

= −4 V)

: Ron = 0.6 Ω (max) (V

= −2.5 V)

•

Low gate threshold voltage

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−30

±10

Gate-source voltage

GSS

−700

−1400

200

Drain current

Pulse

Drain power dissipation (Ta = 25°C)

Channel temperature

°C

stg

150

Storage temperature range

−55~150

°C

JEDEC

JEITA

TO-236MOD

SC-59

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-3F1F

Weight: 0.012 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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