SSM3J01T

更新时间： 2024-11-19 21:55:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	163K
描述
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

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SSM3J01T 数据手册

SSM3J01T

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J01T

Power Management Switch

High Speed Switching Applications

Unit: mm

Small Package

Low on Resistance: R = 0.4 Ω (max) (@V

= −4 V)

: R = 0.6 Ω (max) (@V

= −2.5 V)

Low Gate Threshold Voltage

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Drain-Source voltage

Gate-Source voltage

-30

±10

-1.7

GSS

Drain current

(Note2)

Pulse

-3.4

Drain power dissipation (Ta = 25°C)

1250

(Note1)

JEDEC

JEITA

―

Channel temperature

Storage temperature range

150

-55~150

°C

stg

Note 1: Mounted on FR4 board

TOSHIBA

2-3S1A

(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm , t = 10 s)

Weight: 10 mg (typ.)

Note 2: The pulse width limited by max channel temperature.

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

The Channel-to-Ambient thermal resistance R

th (ch-a)

and the drain power dissipation P vary according to the

board material, board area, board thickness and pad area, and are also affected by the environment in which the

product is used. When using this device, please take heat dissipation fully into account.

Marking

Equivalent Circuit

D E

2002-01-16

12 3 4 5

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