Datasheet > SSM3J05FU

SSM3J05FU

更新时间： 2024-10-27 21:55:27

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	177K
描述
Power Management Switch High Speed Switching Applications

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中文翻译

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技术参数
数据手册

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SSM3J05FU 技术参数

生命周期：	Obsolete	零件包装代码：	SC-70
包装说明：	2-2E1E, USM, SC-70, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.81
其他特性：	LOW THRESHOLD	配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	0.2 A
最大漏源导通电阻：	3.3 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

SSM3J05FU 数据手册

SSM3J05FU

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J05FU

Power Management Switch

High Speed Switching Applications

Unit: mm

Small package

Low on resistance : R = 3.3 Ω (max) (@V

= −4 V)

= −2.5 V)

: R = 4.0 Ω (max) (@V

Low gate threshold voltage

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

-20

±12

GSS

Drain current

-200

-400

Pulse

Drain power dissipation (Ta = 25°C)

150

(Note 1)

Channel temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

-55~150

stg

SC-70

2-2E1E

Note 1: Mounted on FR4 board.

TOSHIBA

(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.6 mm²´ 3)

Weight: 0.006 g (typ.)

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2003-03-27

12 3 4 5

中文翻译

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