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SSM3J05FU

更新时间: 2024-11-19 21:55:27
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
5页 177K
描述
Power Management Switch High Speed Switching Applications

SSM3J05FU 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:2-2E1E, USM, SC-70, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.81
其他特性:LOW THRESHOLD配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:20 V最大漏极电流 (ID):0.2 A
最大漏源导通电阻:3.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON

SSM3J05FU 数据手册

 浏览型号SSM3J05FU的Datasheet PDF文件第2页浏览型号SSM3J05FU的Datasheet PDF文件第3页浏览型号SSM3J05FU的Datasheet PDF文件第4页浏览型号SSM3J05FU的Datasheet PDF文件第5页 
                                                        
                                                        
SSM3J05FU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
SSM3J05FU  
Power Management Switch  
High Speed Switching Applications  
Unit: mm  
·
·
Small package  
Low on resistance : R = 3.3 (max) (@V  
= 4 V)  
= 2.5 V)  
on  
GS  
GS  
: R = 4.0 (max) (@V  
on  
Low gate threshold voltage  
·
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
Gate-source voltage  
V
-20  
±12  
V
V
DS  
V
GSS  
DC  
Drain current  
I
-200  
-400  
D
mA  
Pulse  
I
DP  
P
D
Drain power dissipation (Ta = 25°C)  
150  
mW  
(Note 1)  
Channel temperature  
T
150  
°C  
°C  
ch  
JEDEC  
JEITA  
Storage temperature range  
T
-55~150  
stg  
SC-70  
2-2E1E  
Note 1: Mounted on FR4 board.  
TOSHIBA  
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.6 mm2 ´ 3)  
Weight: 0.006 g (typ.)  
Marking  
Equivalent Circuit  
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
1
2003-03-27  

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