SSM3J02F

更新时间： 2024-11-19 22:14:15

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	158K
描述
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

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SSM3J02F 数据手册

SSM3J02F

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J02F

Power Management Switch

Unit: mm

High Speed Switching Applications

Small package

Low on resistance : R = 0.5 Ω (max) (@V

= −4 V)

= −2.5 V)

: R = 0.7 Ω (max) (@V

Low gate threshold voltage

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

-30

±10

GSS

Drain current

-600

-1200

200

Pulse

Drain power dissipation (Ta = 25°C)

Channel temperature

°C

stg

JEDEC

JEITA

TO-236MOD

SC-59

150

Storage temperature range

-55~150

°C

TOSHIBA

2-3F1F

Weight: 0.012 g (typ.)

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2003-03-27

12 3 4 5

中文翻译

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