Datasheet > SI5857DU

SI5857DU

更新时间： 2024-10-30 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
10页	137K
描述
P-Channel 20-V (D-S) MOSFET With Schottky Diode

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SI5857DU 数据手册

Si5857DU

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET With Schottky Diode

FEATURES

MOSFET PRODUCT SUMMARY

•

Halogen-free

_D(A)^a

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

LITTLE FOOT^®Plus Power MOSFET

New Thermally Enhanced PowerPAK^®

ChipFET^®Package

0.058 at V_GS= - 4.5 V

0.100 at V_GS= - 2.5 V

- 20

5.5 nC

RoHS

COMPLIANT

- Small Footprint Area

- Low On-Resistance

SCHOTTKY PRODUCT SUMMARY

- Thin 0.8 mm Profile

V_f(V)

I_F(A)^a

V_KA(V)

Diode Forward Voltage

0.375 at 1 A

APPLICATIONS

•

Charging Switch for Portable Devices

- With Integrated Low V_fTrench Schottky Diode

PowerPAK^®ChipFET^®Dual

Marking Code

XXX

Lot Traceability

and Date Code

Part # Code

Bottom View

P-Channel MOSFET

Ordering Information: Si5857DU-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 20

Unit

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET)

V_DS

V_KA

V_GS

6^a

- 5^{b, c}

- 4^{b, c}

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C) (MOSFET)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current (MOSFET)

I_DM

I_S

- 20

- 6^a

1.9^{b, c}

_C= 25 °C

Continuous Source Current (MOSFET Diode Conduction)

T_A= 25 °C

Average Forward Current (Schottky)

Pulsed Forward Current (Schottky)

I_F

I_FM

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

10.4

6.7

P_D

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

2.3^{b, c}

1.5^{b, c}

7.8

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

P_D

2.1

T_A= 70 °C

1.3

Operating Junction and Storage Temperature Range

Soldering Recommendation (Peak Temperature)^{d, e}

T_J, T_stg

- 55 to 150

260

°C

Document Number: 73696

S-81449-Rev. C, 23-Jun-08

www.vishay.com

12 3 4 5 6 7...10

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