Datasheet > SI5903DC_08

SI5903DC_08

更新时间： 2024-09-13 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	134K
描述
Dual P-Channel 2.5-V (G-S) MOSFET

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SI5903DC_08 数据手册

Si5903DC

Vishay Siliconix

Dual P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

(V)

(Ω)

I (A)

DS(on)

0.155 @ V = --4.5 V

2.9

2.7

2.2

-- 2 0

0.180 @ V = --3.6 V

0.260 @ V = --2.5 V

1206-8 ChipFETt

Marking Code

DA XX

Lot Traceability

and Date Code

Part # Code

Bottom View

P-Channel MOSFET

Ordering Information: Si5903DC-T1

ABSOLUTE MAXIMUM RATINGS (T_A= 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-- 2 0

12

= 25_C

= 85_C

2.1

1.5

2.9

2.1

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

10

Continuous Source Current (Diode Conduction)

-- 1 . 8

2.1

-- 0 . 9

1.1

= 25_C

= 85_C

Maximum Power Dissipation

1.1

0.6

Operating Junction and Storage Temperature Range

T , T

--55 to 150

260

stg

b, c

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 5 sec

Steady State

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 71054

S-21251—Rev. B, 05-Aug-02

www.vishay.com

2-1

12 3 4 5

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