Datasheet > SI5904DC_08

SI5904DC_08

更新时间： 2024-10-30 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	95K
描述
Dual N-Channel 2.5-V (G-S) MOSFET

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SI5904DC_08 数据手册

Si5904DC

Vishay Siliconix

Dual N-Channel 2.5-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

Available

D 2.5-V Rated

D Lead (Pb)-Free Version is RoHS

0.075 @ V = 4.5 V

"4.2

"3.1

Compliant

0.134 @ V = 2.5 V

1206-8 ChipFETt

Marking Code

CB XX

Lot Traceability

and Date Code

Part # Code

N-Channel MOSFET

Bottom View

Ordering Information: Si5904DC-T1

Si5904DC-T1—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 85_C

"4.2

"3.0

"3.1

"2.2

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

"10

Continuous Source Current (Diode Conduction)

1.8

2.1

1.1

0.9

1.1

0.6

= 25_C

= 85_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

b, c

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

110

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 71065

S-50695—Rev. C, 18-Apr-05

www.vishay.com

12 3 4 5

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