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SI5905BDC-T1-E3 PDF预览

SI5905BDC-T1-E3

更新时间: 2024-09-15 09:25:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 115K
描述
Dual P-Channel 8-V (D-S) MOSFET

SI5905BDC-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-C8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.68配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:8 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 A最大漏源导通电阻:0.08 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-C8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):3.1 W
子类别:Other Transistors表面贴装:YES
端子面层:PURE MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI5905BDC-T1-E3 数据手册

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New Product  
Si5905BDC  
Vishay Siliconix  
Dual P-Channel 8-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFETs  
VDS (V)  
rDS(on) (Ω)  
ID (A)  
Qg (Typ)  
- 4a  
- 4a  
0.080 at VGS = - 4.5 V  
0.117 at VGS = - 2.5 V  
0.170 at VGS = - 1.8 V  
RoHS  
- 8  
4 nC  
COMPLIANT  
APPLICATIONS  
Load Switch for portable devices  
- 3.5  
1206-8 ChipFET® (Dual)  
1
S
1
S
2
S
1
D
G
1
1
D
S
1
2
G
1
G
2
Marking Code  
D
G
2
2
DH XXX  
D
Lot Traceability  
and Date Code  
2
Part #  
Code  
D
1
D
2
Bottom View  
P-Channel MOSFET  
P-Channel MOSFET  
Ordering Information: Si5905BDC-T1-E3 (Lead (Pb)-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 8  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
8
- 4a  
- 4a  
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 3.5b, c  
- 2.8b, c  
- 10  
- 2.6  
- 1.2b, c  
3.1  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
Continuous Source-Drain Diode Current  
T
A = 25 °C  
C = 25 °C  
T
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
2
PD  
Maximum Power Dissipation  
W
1.5b, c  
0.94b, c  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Foot (Drain)  
Symbol  
RthJA  
Typical  
70  
Maximum  
Unit  
t 5 sec  
Steady State  
85  
40  
°C/W  
RthJF  
33  
Notes:  
a. Package limited.  
b. Surface Mounted on 1" x 1" FR4 Board.  
c. t = 5 sec.  
d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is  
not required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under Steady State conditions is 120 °C/W.  
Document Number: 74650  
S-71343-Rev. A, 09-Jul-07  
www.vishay.com  
1

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