Si5935CDC
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFETs
100 % Rg Tested
I
D (A)a
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
•
- 4g
- 4g
0.100 at VGS = - 4.5 V
0.120 at VGS = - 2.5 V
0.156 at VGS = - 1.8 V
RoHS
COMPLIANT
APPLICATIONS
- 20
6.2 nC
•
Load Switch for Portable Devices
- 3.8
•
Battery Switch
1206-8 Chip-FET®
1
S
1
S
2
S
1
D
1
G
1
Marking Code
DK XXX
D
1
S
2
G
1
G
2
Lot Traceability
and Date Code
D
2
G
2
D
2
Part # Code
Bottom View
Ordering Information: Si5935CDC-T1-E3 (Lead (Pb)-free)
D
D
2
1
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
- 20
8
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 4g
- 3.8
- 3.1b, c
TC = 25 °C
TC = 70 °C
ID
Continuous Drain Current (TJ = 150 °C)
T
A = 25 °C
- 2.5b, c
- 10
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
- 2.6
- 1.7b, c
3.1
Source Drain Current Diode Current
2.0
PD
Maximum Power Dissipation
W
1.3b, c
0.8b, c
TJ, Tstg
- 55 to 150
260
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typ.
77
Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
Notes:
t ≤ 5 s
95
40
°C/W
Steady State
33
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 130 °C/W.
g. Package limited.
Document Number: 68965
S-82573-Rev. A, 27-Oct-08
www.vishay.com
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