5秒后页面跳转
SI5944DU-T1-E3 PDF预览

SI5944DU-T1-E3

更新时间: 2024-11-09 19:47:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 124K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SI5944DU-T1-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.82最大漏极电流 (Abs) (ID):6 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):10 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

SI5944DU-T1-E3 数据手册

 浏览型号SI5944DU-T1-E3的Datasheet PDF文件第2页浏览型号SI5944DU-T1-E3的Datasheet PDF文件第3页浏览型号SI5944DU-T1-E3的Datasheet PDF文件第4页浏览型号SI5944DU-T1-E3的Datasheet PDF文件第5页浏览型号SI5944DU-T1-E3的Datasheet PDF文件第6页浏览型号SI5944DU-T1-E3的Datasheet PDF文件第7页 
Si5944DU  
Vishay Siliconix  
Dual N-Channel 40-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)  
TrenchFET® Power MOSFET  
6a  
New Thermally Enhanced PowerPAK®  
ChipFET® Package  
0.112 at VGS = 10 V  
0.171 at VGS = 4.5 V  
RoHS  
40  
2.2 nC  
4.9  
COMPLIANT  
- Small Footprint Area  
- Low On-Resistance  
PowerPAK ChipFET Dual  
- Thin 0.8 mm Profile  
1
APPLICATIONS  
Marking Code  
CC XXX  
2
S
1
DC-DC Power Supply  
D
1
D
2
G
1
3
Lot Traceability  
and Date Code  
D
1
4
S
8
2
D
1
Part # Code  
G
7
2
D
2
G
1
G
2
6
D
2
5
S
S
2
1
Bottom View  
Ordering Information: Si5944DU-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
VGS  
Limit  
40  
Unit  
V
20  
6a  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
4.87  
3.28b, c  
2.63b, c  
10  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
8.33  
1.68b, c  
5
Continuous Source-Drain Diode Current  
IAS  
EAS  
Single Pulse Avalanche Current  
Avalanche Energy  
L = 0.1 mH  
mJ  
W
1.25  
10  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
6.4  
PD  
Maximum Power Dissipation  
2.0b, c  
1.3b, c  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJC  
Typical  
52  
Maximum  
Unit  
Maximum Junction-to-Ambientb, f  
t 5 s  
Steady State  
62  
18  
°C/W  
Maximum Junction-to-Case (Drain)  
15  
Notes:  
a. Package limited.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under Steady State conditions is 110 °C/W.  
Document Number: 73683  
S-81449-Rev. B, 23-Jun-08  
www.vishay.com  
1

SI5944DU-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI5944DU-T1-GE3 VISHAY

类似代替

Trans MOSFET N-CH 40V 3.28A 8-Pin PowerPAK ChipFET T/R

与SI5944DU-T1-E3相关器件

型号 品牌 获取价格 描述 数据表
SI5944DU-T1-GE3 VISHAY

获取价格

Trans MOSFET N-CH 40V 3.28A 8-Pin PowerPAK ChipFET T/R
SI5945DU VISHAY

获取价格

Dual P-Channel 20-V (D-S) MOSFET
SI5947DU VISHAY

获取价格

Dual P-Channel 20-V (D-S) MOSFET
SI5947DU-T1-E3 VISHAY

获取价格

Transistor
SI5947DU-T1-GE3 VISHAY

获取价格

MOSFET P-CH D-S 20V PPAK CHIPFET
Si5948DU VISHAY

获取价格

Dual N-Channel 40 V (D-S) MOSFET
SI5975DC VISHAY

获取价格

Dual P-Channel 12-V (D-S) MOSFET
SI5975DC-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, 3.1A I(D), 12V, 2-Element, P-Channel, Silicon, Metal
SI5975DC-T1 VISHAY

获取价格

Dual P-Channel 12-V (D-S) MOSFET
SI5975DC-T1-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,