生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-XDSO-N6 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.83 |
最大漏极电流 (Abs) (ID): | 6 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XDSO-N6 | 端子数量: | 6 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 10 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI5945DU | VISHAY |
获取价格 |
Dual P-Channel 20-V (D-S) MOSFET | |
SI5947DU | VISHAY |
获取价格 |
Dual P-Channel 20-V (D-S) MOSFET | |
SI5947DU-T1-E3 | VISHAY |
获取价格 |
Transistor | |
SI5947DU-T1-GE3 | VISHAY |
获取价格 |
MOSFET P-CH D-S 20V PPAK CHIPFET | |
Si5948DU | VISHAY |
获取价格 |
Dual N-Channel 40 V (D-S) MOSFET | |
SI5975DC | VISHAY |
获取价格 |
Dual P-Channel 12-V (D-S) MOSFET | |
SI5975DC-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 3.1A I(D), 12V, 2-Element, P-Channel, Silicon, Metal | |
SI5975DC-T1 | VISHAY |
获取价格 |
Dual P-Channel 12-V (D-S) MOSFET | |
SI5975DC-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, | |
SI5980DU-T1-GE3 | VISHAY |
获取价格 |
DUAL N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel |