Datasheet > SI5938DU

SI5938DU

更新时间： 2024-11-06 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	127K
描述
Dual N-Channel 20-V (D-S) MOSFET

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SI5938DU 数据手册

Si5938DU

Vishay Siliconix

Dual N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

TrenchFET^®Power MOSFET

New Thermally Enhanced PowerPAK^®

ChipFET^®Package

0.039 at V_GS= 4.5 V

0.045 at V_GS= 2.5 V

0.055 at V_GS= 1.8 V

RoHS

6 nC

COMPLIANT

- Small Footprint Area

- Low On-Resistance

PowerPAK ChipFET Dual

- Thin 0.8 mm Profile

APPLICATIONS

•

Load Switch for Portable Applications

DC-DC Point-of-Load

Marking Code

CA XXX

Lot Traceability

and Date Code

Part # Code

Bottom View

Ordering Information: Si5938DU-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

6^a

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

7.2^{b, c}

T_A= 25 °C

T_A= 70 °C

5.8^{b, c}

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

6.9

1.9^{b, c}

8.3

Continuous Source-Drain Diode Current

_C= 25 °C

_C= 70 °C

5.3

P_D

Maximum Power Dissipation

2.3^{b, c}

1.5^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

t ≤ 5 s

Steady State

°C/W

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 105 °C/W.

Document Number: 73463

S-81449-Rev. B, 23-Jun-08

www.vishay.com

12 3 4 5 6 7

中文翻译

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与SI5938DU相关器件

型号	品牌	获取价格	描述	数据表
SI5938DU-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI5938DU-T1-GE3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI5941DU	VISHAY	获取价格	Dual P-Channel 8-V (D-S) MOSFET
SI5941DU-T1-E3	VISHAY	获取价格	Transistor
SI5943DU	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET
SI5943DU-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
SI5944DU	VISHAY	获取价格	Dual N-Channel 40-V (D-S) MOSFET
SI5944DU-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI5944DU-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 40V 3.28A 8-Pin PowerPAK ChipFET T/R
SI5945DU	VISHAY	获取价格	Dual P-Channel 20-V (D-S) MOSFET

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