是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.8 | Is Samacsys: | N |
最大漏极电流 (Abs) (ID): | 3 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最高工作温度: | 150 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 2.1 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI5935DC-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, | |
Si5936DU | VISHAY |
获取价格 |
Dual N-Channel 30 V (D-S) MOSFET | |
SI5938DU | VISHAY |
获取价格 |
Dual N-Channel 20-V (D-S) MOSFET | |
SI5938DU-T1-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI5938DU-T1-GE3 | VISHAY |
获取价格 |
Dual N-Channel 20-V (D-S) MOSFET | |
SI5941DU | VISHAY |
获取价格 |
Dual P-Channel 8-V (D-S) MOSFET | |
SI5941DU-T1-E3 | VISHAY |
获取价格 |
Transistor | |
SI5943DU | VISHAY |
获取价格 |
Dual P-Channel 12-V (D-S) MOSFET | |
SI5943DU-T1-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
SI5944DU | VISHAY |
获取价格 |
Dual N-Channel 40-V (D-S) MOSFET |