Datasheet > SI5935DC-T1-GE3

SI5935DC-T1-GE3

更新时间： 2024-09-16 15:51:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	117K
描述
Small Signal Field-Effect Transistor,

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SI5935DC-T1-GE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.7
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SI5935DC-T1-GE3 数据手册

Si5935DC

Vishay Siliconix

Dual P-Channel 1.8 V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 4.1

- 3.4

- 2.9

Definition

0.086 at V_GS= - 4.5 V

0.121 at V_GS= - 2.5 V

0.171 at V_GS= - 1.8 V

•

TrenchFET^®Power MOSFETs

Low R_DS(on)Dual and Excellent Power

Handling in a Compact Footprint

Compliant to RoHS Directive 2002/95/EC

- 20

•

1206-8 ChipFET^®

APPLICATIONS

•

Load Switch

PA Switch

Battery Switch

Marking Code

DF XX

Lot Traceability

and Date Code

Part # Code

Bottom View

Ordering Information: Si5935DC-T1-E3 (Lead (Pb)-free)

Si5935DC-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 20

V_GS

T_A= 25 °C

T_A= 85 °C

- 4.1

- 2.9

- 3

Continuous Drain Current (T_J= 150 °C)^a

I_D

- 2.2

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

I_DM

I_S

- 15

- 1.8

2.1

- 0.9

1.1

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 85 °C

1.1

0.6

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{b, c}

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

110

Maximum Junction-to-Ambient^a

Steady State

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result

of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection.

c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 72220

S10-0936-Rev. C, 19-Apr-10

www.vishay.com

12 3 4 5 6

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与SI5935DC-T1-GE3相关器件

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SI5938DU-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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