Datasheet > Si5936DU

Si5936DU

更新时间： 2024-11-07 14:49:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	188K
描述
Dual N-Channel 30 V (D-S) MOSFET

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Si5936DU 数据手册

Si5936DU

Vishay Siliconix

www.vishay.com

Dual N-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

PowerPAK^®ChipFET^®Dual

D₁

• Thermally enhanced PowerPAK^®ChipFET^®

package

- Small footprint area

- Low on-resistance

- Thin 0.8 mm profile

• 100 % R_gtested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D₁

D₂

S₁

G₁

G₂

₂

Top View

Bottom View

APPLICATIONS

• Network

Marking code: CF

• System power DC/DC

PRODUCT SUMMARY

V_DS(V)

0.030

0.040

3.5

_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 4.5 V

Q_gtyp. (nC)

_D(A) ^a

Configuration

Dual

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK ChipFET

Si5936DU-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

6 ^a

Continuous drain current (T_J= 150 °C)

I_D

6 ^{a, b, c}

5.3 ^{b, c}

Pulsed drain current (t = 300 μs)

I_DM

I_S

T_C= 25 °C

6 ^a

1.9 ^{b, c}

10.4

Continuous source-drain diode current

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

6.7

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

2.3 ^{b, c}

1.5 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

SYMBOL

TYPICAL

MAXIMUM

UNIT

t  5 s

Steady state

R_thJA

R_thJC

°C/W

9.5

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 5 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 105 °C/W

S12-2729-Rev. A, 12-Nov-12

Document Number: 62804

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与Si5936DU相关器件

型号	品牌	获取价格	描述	数据表
SI5938DU	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI5938DU-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI5938DU-T1-GE3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI5941DU	VISHAY	获取价格	Dual P-Channel 8-V (D-S) MOSFET
SI5941DU-T1-E3	VISHAY	获取价格	Transistor
SI5943DU	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET
SI5943DU-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
SI5944DU	VISHAY	获取价格	Dual N-Channel 40-V (D-S) MOSFET
SI5944DU-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI5944DU-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 40V 3.28A 8-Pin PowerPAK ChipFET T/R

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