Si5935DC
Vishay Siliconix
Dual P-Channel 1.8 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 4.1
- 3.4
- 2.9
Definition
0.086 at VGS = - 4.5 V
0.121 at VGS = - 2.5 V
0.171 at VGS = - 1.8 V
•
•
TrenchFET® Power MOSFETs
Low RDS(on) Dual and Excellent Power
Handling in a Compact Footprint
Compliant to RoHS Directive 2002/95/EC
- 20
•
1206-8 ChipFET®
APPLICATIONS
•
•
•
Load Switch
PA Switch
Battery Switch
1
S
1
S
1
S
2
Marking Code
D
1
G
1
DF XX
D
1
S
2
Lot Traceability
and Date Code
D
2
G
2
G
G
2
1
Part # Code
D
2
Bottom View
D
1
D
2
Ordering Information: Si5935DC-T1-E3 (Lead (Pb)-free)
Si5935DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
5 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 20
8
V
VGS
TA = 25 °C
TA = 85 °C
- 4.1
- 2.9
- 3
Continuous Drain Current (TJ = 150 °C)a
ID
- 2.2
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
IDM
IS
- 15
- 1.8
2.1
- 0.9
1.1
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 85 °C
1.1
0.6
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
50
Maximum
Unit
t ≤ 5 s
60
110
40
Maximum Junction-to-Ambienta
Steady State
Steady State
90
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
30
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72220
S10-0936-Rev. C, 19-Apr-10
www.vishay.com
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