是否无铅: | 含铅 | 生命周期: | Transferred |
包装说明: | , | 针数: | 8 |
Reach Compliance Code: | unknown | 风险等级: | 5.04 |
最大漏极电流 (Abs) (ID): | 3 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1.1 W |
子类别: | Other Transistors | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI5905DC-T1 | VISHAY |
获取价格 |
Dual P-Channel 1.8-V (G-S) MOSFET | |
SI5905DC-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 3A I(D), 8V, 2-Element, P-Channel, Silicon, Metal-ox | |
SI5905DC-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 3A I(D), 8V, 2-Element, P-Channel, Silicon, Metal-ox | |
SI5906DU | VISHAY |
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Dual N-Channel 30-V (D-S) MOSFET | |
SI5906DU-T1-GE3 | VISHAY |
获取价格 |
Dual N-Channel 30-V (D-S) MOSFET | |
SI5908DC | VISHAY |
获取价格 |
Dual N-Channel 20-V (D-S) MOSFET | |
SI5908DC_06 | VISHAY |
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N-Channel 20-V (D-S) MOSFET | |
SI5908DC_10 | VISHAY |
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Dual N-Channel 20 V (D-S) MOSFET | |
SI5908DC-T1-E3 | VISHAY |
获取价格 |
Dual N-Channel 20-V (D-S) MOSFET | |
SI5908DC-T1-GE3 | VISHAY |
获取价格 |
Dual N-Channel 20 V (D-S) MOSFET |