SI5905DC-T1

更新时间： 2024-09-14 22:17:59

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威世 - VISHAY		/
页数	文件大小	规格书
4页	107K
描述
Dual P-Channel 1.8-V (G-S) MOSFET

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SI5905DC-T1 数据手册

Si5905DC

Vishay Siliconix

Dual P-Channel 1.8-V (G-S) MOSFET

PRODUCT SUMMARY

(V)

(Ω)

I (A)

DS(on)

0.090 @ V = --4.5 V

4.1

3.4

2.9

-- 8

0.130 @ V = --2.5 V

0.180 @ V = --1.8 V

1206-8 ChipFETt

Marking Code

DB XX

Lot Traceability

and Date Code

Part # Code

Bottom View

P-Channel MOSFET

Ordering Information: Si5905DC-T1

ABSOLUTE MAXIMUM RATINGS (T_A= 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-- 8

8

= 25_C

= 85_C

3.0

2.2

4.1

2.9

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

10

Continuous Source Current (Diode Conduction)

-- 1 . 8

2.1

-- 0 . 9

1.1

= 25_C

= 85_C

Maximum Power Dissipation

1.1

0.6

Operating Junction and Storage Temperature Range

T , T

--55 to 150

260

stg

b, c

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 5 sec

Steady State

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 71066

S-21251—Rev. B, 05-Aug-02

www.vishay.com

2-1

12 3 4

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