Si5908DC
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
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Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
5.9
Definition
TrenchFET® Power MOSFETs
Ultra Low RDS(on) and Excellent Power
Handling in Compact Footprint
0.040 at VGS = 4.5 V
0.045 at VGS = 2.5 V
0.052 at VGS = 1.8 V
•
•
20
5.6
5.2
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
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•
•
Load Switch
PA Switch
Battery Switch
1206-8 ChipFET®
D
D
2
1
1
S
1
D
1
G
1
D
1
S
2
D
2
G
2
G
1
G
2
Marking Code
D
2
CC XXX
Lot Traceability
and Date Code
Part # Code
Bottom View
S
1
S
2
Ordering Information: Si5908DC-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
N-Channel MOSFET
Si5908DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
5 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
20
V
VGS
8
TA = 25 °C
TA = 85 °C
5.9
4.2
4.4
3.1
Continuous Drain Current (TJ = 150 °C)a
ID
A
IDM
IS
Pulsed Drain Current
20
Continuous Source Current (Diode Conduction)a
1.8
2.1
1.1
0.9
1.1
0.6
TA = 25 °C
TA = 85 °C
Maximum Power Dissipationa
PD
W
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
50
Maximum
Unit
t ≤ 5 s
60
110
40
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
RthJA
Steady State
Steady State
90
°C/W
RthJF
30
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73074
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
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