Datasheet > SI5902BDC-T1-GE3

SI5902BDC-T1-GE3

更新时间： 2024-10-30 09:25:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	117K
描述
Dual N-Channel 30 V (D-S) MOSFET

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SI5902BDC-T1-GE3 数据手册

Si5902BDC

Vishay Siliconix

Dual N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

4^a

0.065 at V_GS= 10 V

0.100 at V_GS= 4.5 V

•

TrenchFET^®Power MOSFET

Compliant to RoHS Directive 2002/95/EC

2 nC

APPLICATIONS

•

Load Switch for Portable Applications

DC/DC Converter

1206-8 ChipFET^®(Dual)

Marking Code

CE XXX

Lot Traceability

and Date Code

Part #

Code

Bottom View

N-Channel MOSFET

Ordering Information: Si5902BDC-T1-E3 (Lead (Pb)-free)

Si5902BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

4^a

_C= 25 °C

_C= 85 °C

3.8^a

Continuous Drain Current (T_J= 150 °C)

I_D

3.7^{b, c}

2.6^{b, c}

T_A= 25 °C

T_A= 85 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

2.6

1.3^{b, c}

3.12

Continuous Source-Drain Diode Current

_A= 25 °C

_C= 25 °C

T_C= 85 °C

T_A= 25 °C

T_A= 85 °C

2.0

P_D

Maximum Power Dissipation

1.5^{b, c}

0.8^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

R_thJF

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 120 °C/W.

Document Number: 70415

S10-0548-Rev. B, 08-Mar-10

www.vishay.com

12 3 4 5 6 7

中文翻译

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与SI5902BDC-T1-GE3相关器件

型号	品牌	获取价格	描述	数据表
SI5902DC	VISHAY	获取价格	Dual N-Channel 30-V (D-S) MOSFET
SI5902DC-E3	VISHAY	获取价格	TRANSISTOR 2900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1206-8, CHIPFET-
SI5902DC-T1	VISHAY	获取价格	Dual N-Channel 30-V (D-S) MOSFET
SI5902DC-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
SI5902DC-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
SI5903DC	VISHAY	获取价格	Dual P-Channel 2.5-V (G-S) MOSFET
SI5903DC_08	VISHAY	获取价格	Dual P-Channel 2.5-V (G-S) MOSFET
SI5903DC-E3	VISHAY	获取价格	TRANSISTOR 2100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1206-8, CHIPFET-
SI5903DC-T1	VISHAY	获取价格	Dual P-Channel 2.5-V (G-S) MOSFET
SI5903DC-T1-E3	VISHAY	获取价格	TRANSISTOR 2100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT,

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