是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.85 | 最大漏极电流 (Abs) (ID): | 2.9 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.1 W | 子类别: | FET General Purpose Power |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI5902DC-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal | |
SI5902DC-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal | |
SI5903DC | VISHAY |
获取价格 |
Dual P-Channel 2.5-V (G-S) MOSFET | |
SI5903DC_08 | VISHAY |
获取价格 |
Dual P-Channel 2.5-V (G-S) MOSFET | |
SI5903DC-E3 | VISHAY |
获取价格 |
TRANSISTOR 2100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1206-8, CHIPFET- | |
SI5903DC-T1 | VISHAY |
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Dual P-Channel 2.5-V (G-S) MOSFET | |
SI5903DC-T1-E3 | VISHAY |
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TRANSISTOR 2100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, | |
SI5904DC | VISHAY |
获取价格 |
Dual N-Channel 2.5-V (G-S) MOSFET | |
SI5904DC_08 | VISHAY |
获取价格 |
Dual N-Channel 2.5-V (G-S) MOSFET | |
SI5904DC_10 | VISHAY |
获取价格 |
Dual N-Channel 2.5 V (G-S) MOSFET |