是否无铅: | 含铅 | 生命周期: | Transferred |
包装说明: | , | 针数: | 8 |
Reach Compliance Code: | unknown | 风险等级: | 5.06 |
最大漏极电流 (Abs) (ID): | 2.1 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1.1 W |
子类别: | Other Transistors | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI5903DC_08 | VISHAY |
获取价格 |
Dual P-Channel 2.5-V (G-S) MOSFET | |
SI5903DC-E3 | VISHAY |
获取价格 |
TRANSISTOR 2100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1206-8, CHIPFET- | |
SI5903DC-T1 | VISHAY |
获取价格 |
Dual P-Channel 2.5-V (G-S) MOSFET | |
SI5903DC-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 2100 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, | |
SI5904DC | VISHAY |
获取价格 |
Dual N-Channel 2.5-V (G-S) MOSFET | |
SI5904DC_08 | VISHAY |
获取价格 |
Dual N-Channel 2.5-V (G-S) MOSFET | |
SI5904DC_10 | VISHAY |
获取价格 |
Dual N-Channel 2.5 V (G-S) MOSFET | |
SI5904DC-T1 | VISHAY |
获取价格 |
Dual N-Channel 2.5-V (G-S) MOSFET | |
SI5904DC-T1-E3 | VISHAY |
获取价格 |
Dual N-Channel 2.5-V (G-S) MOSFET | |
SI5904DC-T1-GE3 | VISHAY |
获取价格 |
Dual N-Channel 2.5 V (G-S) MOSFET |