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SI5858DU

更新时间： 2024-10-30 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
10页	127K
描述
N-Channel 20-V (D-S) MOSFET with Schottky Diode

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SI5858DU 数据手册

Si5858DU

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET with Schottky Diode

FEATURES

MOSFET PRODUCT SUMMARY

•

Halogen-free

_D(A)^a

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

LITTLE FOOT^®Plus Power MOSFET

New Thermally Enhanced PowerPAK^®

ChipFET^®Package

0.039 at V_GS= 4.5 V

0.045 at V_GS= 2.5 V

0.055 at V_GS= 1.8 V

RoHS

6 nC

COMPLIANT

- Small Footprint Area

- Low On-Resistance

- Thin 0.8 mm Profile

SCHOTTKY PRODUCT SUMMARY

V_F(V)

Diode Forward Voltage

I_F(A)^a

V_KA(V)

APPLICATIONS

•

Load Switch for Portable Applications

- Ideal for Boost Circuits

0.375 at 1 A

PowerPAK ChipFET Dual

Marking Code

XXX

Lot Traceability

and Date Code

Part # Code

Bottom View

Ordering Information: Si5858DU-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_KA

V_GS

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET)

6^a

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C) (MOSFET)

I_D

7.2^{b, c}

5.8^{b, c}

I_DM

I_S

Pulsed Drain Current (MOSFET)

T_C= 25 °C

T_A= 25 °C

6.9

Continuous Source Current (MOSFET Diode Conduction)

1.9^{b, c}

1^b

I_F

I_FM

Average Forward Current (Schottky)

Pulsed Forward Current (Schottky)

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

8.3

5.3

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

2.3^{b, c}

1.5^{b, c}

7.8

P_D

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

2.1

1.3

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

Document Number: 73460

S-81449-Rev. B, 23-Jun-08

www.vishay.com

12 3 4 5 6 7...10

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