Datasheet > SI3430DV

SI3430DV

更新时间： 2024-11-05 22:33:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	65K
描述
N-Channel 100-V (D-S) MOSFET

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中文翻译

获取价格

技术参数
数据手册

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SI3430DV 技术参数

是否Rohs认证：	不符合	生命周期：	Not Recommended
Reach Compliance Code：	compliant	风险等级：	5.37
配置：	Single	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.14 W	子类别：	FET General Purpose Power
Base Number Matches：	1

SI3430DV 数据手册

Si3430DV

Vishay Siliconix

N-Channel 100-V (D-S) MOSFET

PRODUCT SUMMARY

FEATURES

V_DS(V)

r_DS(on)(W)

I_D(A)

D High-Efficiency PWM Optimized

D 100% R_gTested

0.170 @ V = 10 V

2.4

2.3

100

0.185 @ V = 6.0 V

TSOP-6

Top View

(1, 2, 5, 6) D

3 mm

(3) G

2.85 mm

(4) S

Ordering Information: Si3430DV-T1

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

100

"20

= 25_C

= 85_C

2.4

1.7

1.8

1.3

Continuous Drain Current (T = 175_C)

Pulsed Drain Current

Avalanche Current

L = 0.1 mH

Repetitive Avalanche Energy (Duty Cycle v1%)

1.8

Continuous Source Current (Diode Conduction)

1.7

2.0

1.0

= 25_C

= 85_C

1.14

0.59

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71235

S-31725—Rev. B, 18-Aug-03

www.vishay.com

12 3 4

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