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SI3430DV-T1 PDF预览

SI3430DV-T1

更新时间: 2024-11-20 22:07:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 65K
描述
N-Channel 100-V (D-S) MOSFET

SI3430DV-T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.88配置:Single
最大漏极电流 (Abs) (ID):1.8 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

SI3430DV-T1 数据手册

 浏览型号SI3430DV-T1的Datasheet PDF文件第2页浏览型号SI3430DV-T1的Datasheet PDF文件第3页浏览型号SI3430DV-T1的Datasheet PDF文件第4页 
Si3430DV  
Vishay Siliconix  
N-Channel 100-V (D-S) MOSFET  
PRODUCT SUMMARY  
FEATURES  
VDS (V)  
rDS(on) (W)  
ID (A)  
D High-Efficiency PWM Optimized  
D 100% Rg Tested  
0.170 @ V = 10 V  
2.4  
2.3  
GS  
100  
0.185 @ V = 6.0 V  
GS  
TSOP-6  
Top View  
(1, 2, 5, 6) D  
1
2
3
6
3 mm  
5
4
(3) G  
2.85 mm  
(4) S  
Ordering Information: Si3430DV-T1  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
100  
DS  
V
V
GS  
"20  
T
= 25_C  
= 85_C  
2.4  
1.7  
1.8  
1.3  
A
a
Continuous Drain Current (T = 175_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
8
6
DM  
Avalanche Current  
I
AR  
L = 0.1 mH  
Repetitive Avalanche Energy (Duty Cycle v1%)  
E
AR  
1.8  
mJ  
A
a
Continuous Source Current (Diode Conduction)  
I
1.7  
2.0  
1.0  
1.0  
S
T
= 25_C  
= 85_C  
1.14  
0.59  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
45  
90  
25  
62.5  
110  
30  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71235  
S-31725—Rev. B, 18-Aug-03  
www.vishay.com  
1
 

SI3430DV-T1 替代型号

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SI3430DV-T1-GE3 VISHAY

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