是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.88 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 1.8 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SI3430DV-T1-GE3 | VISHAY |
功能相似 |
TRANSISTOR 1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMP | |
SI3430DV-T1-E3 | VISHAY |
功能相似 |
TRANSISTOR 1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3430DV-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FE | |
SI3430DV-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMP | |
SI3430DY | VISHAY |
获取价格 |
N-Channel 100-V (D-S) MOSFET | |
SI3433 | VISHAY |
获取价格 |
P-Channel 1.8-V (G-S) MOSFET | |
SI3433BDV | VISHAY |
获取价格 |
P-Channel 1.8-V (G-S) MOSFET | |
SI3433BDV-T1 | VISHAY |
获取价格 |
Transistor | |
SI3433BDV-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 4300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL | |
SI3433BVD | VISHAY |
获取价格 |
Transistor | |
SI3433CDV | VISHAY |
获取价格 |
P-Channel 20-V (D-S) MOSFET | |
SI3433CDV-T1-E3 | VISHAY |
获取价格 |
P-Channel 20-V (D-S) MOSFET |