Datasheet > SI3424BDV

SI3424BDV

更新时间： 2024-11-21 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	145K
描述
N-Channel 30-V (D-S) MOSFET

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中文翻译

获取价格

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SI3424BDV 数据手册

New Product

Si3424BDV

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

Q_g(Typ)

100 % R_gTested

8^a

0.028 at V_GS= 10 V

0.038 at V_GS= 4.5 V

RoHS

6.2

APPLICATIONS

COMPLIANT

•

Load Switch for Portable Devices

TSOP-6

Top View

(1, 2, 5, 6)

Marking Code

AG XX

3 mm

(3)

Lot Traceability

and Date Code

(4)

Part # Code

2.85 mm

N-Channel MOSFET

Ordering Information: Si3424BDV-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

8^{a, b}

T_C= 25 °C

_C= 70 °C

_A= 25 °C

6.7

Continuous Drain Current (T_J= 150 °C)^a

I_D

7^{c, d}

5.6^{c, d}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

2.48

1.74^{c, d}

2.98

Continuous Source-Drain Diode Current

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

1.9

Maximum Power Dissipation^a

P_D

2.1^{c, d}

1.3^{c, d}

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

110

Maximum Junction-to-Ambient^c

R_thJA

Steady State

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Notes:

a. Package Limited.

b. Based on T_C= 25 °C.

c. Surface Mounted on 1" x 1" FR4 board.

d. t = 5 s.

Document Number: 74623

S-72692-Rev. B, 24-Dec-07

www.vishay.com

12 3 4 5 6 7

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