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SI3424CDV-T1-GE3 PDF预览

SI3424CDV-T1-GE3

更新时间: 2024-11-21 20:05:35
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
11页 221K
描述
TRANSISTOR 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-5/6, FET General Purpose Small Signal

SI3424CDV-T1-GE3 技术参数

生命周期:Active零件包装代码:TSSOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:5/6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:1.49配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):8 A最大漏源导通电阻:0.026 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-193AA
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.6 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI3424CDV-T1-GE3 数据手册

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Si3424CDV  
Vishay Siliconix  
N-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
ID (A)a, b  
Qg (Typ.)  
Definition  
TrenchFET® Power MOSFET  
100 % Rg Tested  
0.026 at VGS = 10 V  
0.032 at VGS = 4.5 V  
8
8
30  
4.2  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
Load Switch for Portable Devices  
DC/DC Converters  
TSOP-6  
Top View  
D
D
G
D
1
2
3
6
D
(1, 2, 5, 6)  
Marking Code  
BC XX  
3 mm  
D
5
4
Lot Traceability  
and Date Code  
S
G
Part # Code  
(3)  
2.85 mm  
(4)  
S
Ordering Information: Si3424CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
VDS  
Limit  
30  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
8a  
7.7  
7.2c, d  
5.7c, d  
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
A
TA = 70 °C  
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
20  
TC = 25 °C  
TA = 25 °C  
TC = 25 °C  
TC = 70 °C  
3
Continuous Source-Drain Diode Current  
1.7c, d  
3.6  
2.3  
PD  
Maximum Power Dissipation  
W
2.0c, d  
1.3c, d  
T
A = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
50  
Maximum  
Unit  
Maximum Junction-to-Ambiente  
Maximum Junction-to-Foot (Drain)  
t 5 s  
Steady State  
62.5  
35  
°C/W  
RthJF  
28  
Notes:  
a. Package limited.  
b. Based on TC = 25 °C.  
c. Surface mounted on 1" x 1" FR4 board.  
d. t = 5 s.  
e. Maximum under steady state conditions is 110 °C/W.  
Document Number: 67443  
S11-0863-Rev. A, 02-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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