Datasheet > SI3424CDV

SI3424CDV

更新时间： 2024-11-25 09:26:11

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描述
N-Channel 30 V (D-S) MOSFET

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SI3424CDV 数据手册

Si3424CDV

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)^{a, b}

Q_g(Typ.)

Definition

•

TrenchFET^®Power MOSFET

100 % R_gTested

0.026 at V_GS= 10 V

0.032 at V_GS= 4.5 V

4.2

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch for Portable Devices

•

DC/DC Converters

TSOP-6

Top View

(1, 2, 5, 6)

Marking Code

BC XX

3 mm

Lot Traceability

and Date Code

Part # Code

(3)

2.85 mm

(4)

Ordering Information: Si3424CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

8^a

7.7

7.2^{c, d}

5.7^{c, d}

_C= 25 °C

_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

Continuous Source-Drain Diode Current

1.7^{c, d}

3.6

2.3

P_D

Maximum Power Dissipation

2.0^{c, d}

1.3^{c, d}

_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

Maximum Junction-to-Ambient^e

Maximum Junction-to-Foot (Drain)

t 5 s

Steady State

62.5

°C/W

R_thJF

Notes:

a. Package limited.

b. Based on T_C= 25 °C.

c. Surface mounted on 1" x 1" FR4 board.

d. t = 5 s.

e. Maximum under steady state conditions is 110 °C/W.

Document Number: 67443

S11-0863-Rev. A, 02-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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