是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.92 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.31 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1.14 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3422DV-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI3422DV-T1 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 0.31A I(D), 200V, 1-Element, N-Channel, Silicon, Met | |
SI3424BDV | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI3424BDV-T1-E3 | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI3424CDV | VISHAY |
获取价格 |
N-Channel 30 V (D-S) MOSFET | |
SI3424CDV-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 8000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-193AA, HALOGEN FREE AND | |
SI3424DV | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI3424DV-T1-E3 | VISHAY |
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TRANSISTOR 5000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET | |
SI3424DV-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 5000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL | |
Si3429EDV | VISHAY |
获取价格 |
P-Channel 20 V (D-S) MOSFET |