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SI3422DV PDF预览

SI3422DV

更新时间: 2024-11-05 06:11:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 55K
描述
N-Channel 200-V (D-S) MOSFET

SI3422DV 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.92Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):0.31 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.14 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SI3422DV 数据手册

 浏览型号SI3422DV的Datasheet PDF文件第2页浏览型号SI3422DV的Datasheet PDF文件第3页浏览型号SI3422DV的Datasheet PDF文件第4页 
                                                                                                                           
_C/W  
Si3422DV  
Vishay Siliconix  
New Product  
N-Channel 200-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
200  
5 @ V = 10 V  
GS  
"0.42  
(1, 2, 5, 6) D  
TSOP-6  
Top View  
1
2
3
6
5
(3) G  
3 mm  
4
(4) S  
2.85 mm  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
200  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
"0.42  
"0.34  
"0.31  
"0.25  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
Avalanche Current  
I
"0.75  
"0.75  
0.028  
"1  
DM  
I
AS  
L = 0.1 mH  
Single Avalanche Energy  
E
AS  
mJ  
A
a
Continuous Source Current (Diode Conduction)  
I
S
T
= 25_C  
= 70_C  
2.1  
1.14  
0.73  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.34  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
50  
90  
35  
60  
110  
42  
a
Maximum Junction-to-Ambient  
R
thJA  
thJF  
Maximum Junction-to-Foot  
R
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71098  
S-99344—Rev. A, 22-Nov-98  
www.vishay.com S FaxBack 408-970-5600  
2-1  

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