Datasheet > SI3420DV-T1

SI3420DV-T1

更新时间： 2024-11-20 22:07:15

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威世 - VISHAY		/
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4页	65K
描述
N-Channel 200-V (D-S) MOSFET

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SI3420DV-T1 数据手册

Si3420DV

Vishay Siliconix

N-Channel 200-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D 100% R_gTested

V_DS(V)

r_DS(on)(W)

I_D(A)

200

3.7 @ V = 10 V

0.5

TSOP-6

Top View

(1, 2, 5, 6) D

3 mm

(3) G

2.85 mm

(4) S

Ordering Information: Si3420DV-T1

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

200

"20

= 25_C

= 70_C

0.5

0.4

0.37

0.29

Continuous Drain Current (T = 150_C)

Pulsed Drain Current (10 ms Pulse Width)

Avalanche Current

L = 0.1 mH

Single Avalanche Energy

0.05

Continuous Source Current (Diode Conduction)

= 25_C

= 70_C

2.1

1.14

0.73

Maximum Power Dissipation

1.34

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71097

S-31725—Rev. B, 18-Aug-03

www.vishay.com

12 3 4

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