Datasheet > Si3421DV

Si3421DV

更新时间： 2024-11-22 14:55:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	279K
描述
P-Channel 30 V (D-S) MOSFET

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Si3421DV 数据手册

Si3421DV

Vishay Siliconix

P-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)() Max.

Q_g(Typ.)

_D(A)^d,e

100 % R_gand UIS Tested

Material categorization:

0.0192 at V_GS= -10 V

0.0232 at V_GS= -6 V

0.0270 at V_GS= -4.5 V

-8

For definitions of compliance please see

www.vishay.com/doc?99912

-30

21 nC

Available

TSOP-6

Top View

APPLICATIONS

•

Load Switches

Adaptor Switch

DC/DC Converter

For Mobile Computing/Consumer

3 mm

Marking Code

BI XX

Lot Traceability

and Date Code

2.85 mm

Part # Code

Ordering Information:

Si3421DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

V_DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

-8^e

-8.3^{a, b}

-6.7^{a, b}

-50

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current (t = 100 µs)

_C= 25 °C

_A= 25 °C

-3.5

-1.7^{a, b}

Continuous Source-Drain Diode Current

I_AS

Avalanche Current

-15

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

11.25

4.2

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

2.7

P_D

Maximum Power Dissipation

2^{a, b}

1.3^{a, b}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

-55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, c}

t 10 s

Steady State

62.5

°C/W

Maximum Junction-to-Foot

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 110 °C/W.

d. Based on T_C= 25 °C.

e. Package limited.

Document Number: 62921

S13-2289-Rev. A, 04-Nov-13

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与Si3421DV相关器件

型号	品牌	获取价格	描述	数据表
SI3421DV-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-o
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SI3422DV-T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.31A I(D), 200V, 1-Element, N-Channel, Silicon, Met
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SI3424CDV	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
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SI3424DV	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
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