Datasheet > SI3420-TP

SI3420-TP

更新时间： 2024-11-21 21:14:59

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	408K
描述
Small Signal Field-Effect Transistor,

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技术参数
数据手册

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SI3420-TP 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.67
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SI3420-TP 数据手册

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

SI3420

Features

N-Channel

Enhancement Mode

•

High dense cell design for extremely low R_DS(ON)

Rugged and reliable

Lead free product is acquired

SOT-23 Package

Field Effect Transistor

Marking Code: R20

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Halogen free available upon request by adding suffix "-HF"

SOT-23

Maximum Ratings @ 25 C Unless Otherwise Specified

1.GATE

Symbol

V_DS

I_D

I_DM

V_GS

Parameter

Drain-source Voltage

Rating

ꢁ12

0.35

357

Unit

2. SOURCE

Drain Current-Continuous

Drain Current-Pulsed ^a

Gate-source Voltageꢀ

3. DRAIN

P_D

Total Power Dissipation

R/W

Thermal Resistance Junction to Ambient^b

T_J

Operating Junction Temperature

Storage Temperature

-55 to +150

T_STG

DIMENSIONS

INCHES

MIN

DIM

MAX

MIN

MAX

3.04

2.64

NOTE

Internal Block Diagram

.110

.083

.120

.104

2.80

2.10

.047

.035

.070

.018

.0005

.035

.003

.015

.055

.041

.081

.024

.0039

.044

.007

.020

1.20

.89

1.78

.45

.013

.89

.085

.37

1.40

1.03

2.05

.60

.100

1.12

.180

.51

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

.037

.950

.037

.950

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Revision: A

2014/11/12

12 3 4

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