Datasheet > SI2356DS-T1-GE3

SI2356DS-T1-GE3

更新时间： 2024-09-13 22:56:55

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威世 - VISHAY		/
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描述
MOSFET N-CH 40V 4.3A SOT-23

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SI2356DS-T1-GE3 数据手册

Si2356DS

Vishay Siliconix

N-Channel 40 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)() Max.

0.051 at V_GS= 10 V

0.054 at V_GS= 4.5 V

0.070 at V_GS= 2.5 V

Q_g(Typ.)

_D(A)^a

4.3

100 % R_gTested

Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

4.1

3.8 nC

3.6

APPLICATIONS

TO-236

(SOT-23)

•

DC/DC Converter

Load Switch

LED Backlighting

Power Management

Top View

Si2356DS (E9)*

* Marking Code

N-Channel MOSFET

Ordering Information:

Si2356DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

V_GS

4.3

Gate-Source Voltage

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.4

Continuous Drain Current (T_J= 150 °C)

I_D

3.2 ^a,b

2.6 ^a,b

I_DM

I_S

Pulsed Drain Current (t = 100 µs)

T_C= 25 °C

T_A= 25 °C

1.4

Continuous Source-Drain Diode Current

0.8 ^a,b

1.7

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

1.1

P_D

Maximum Power Dissipation

0.96 ^a,b

0.62 ^a,b

- 55 to 150

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

100

Maximum

130

Unit

Maximum Junction-to-Ambient ^a,c

t  5 s

Steady State

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under steady state conditions is 175 °C/W.

Document Number: 62893

S13-1814-Rev. A, 12-Aug-13

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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