Datasheet > Si2392ADS

Si2392ADS

更新时间： 2024-11-02 14:54:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	206K
描述
N-Channel 100 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

Si2392ADS 数据手册

Si2392ADS

Vishay Siliconix

www.vishay.com

N-Channel 100 V (D-S) MOSFET

FEATURES

SOT-23 (TO-236)

• TrenchFET^®power MOSFET

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• DC/DC converters / boost converters

• Load switch

Top View

Marking code: G2

• LED backlighting in LCD TVs

• Power management for mobile computing

PRODUCT SUMMARY

V_DS(V)

100

0.126

0.144

0.189

2.9

R_DS(on)max. () at V_GS= 10 V

R_DS(on)max. () at V_GS= 6 V

R_DS(on)max. () at V_GS= 4.5 V

Q_gtyp. (nC)

N-Channel MOSFET

I_D(A) ^a

3.1

Configuration

Single

ORDERING INFORMATION

Package

SOT-23

Lead (Pb)-free and halogen-free

Si2392ADS-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

_C= 70 °C

3.1

2.5

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

2.2 ^{b, c}

1.8 ^{b, c}

Pulsed drain current (t = 300 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

2.1

1 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

L = 0.1 mH

E_AS

0.45

2.5

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

1.6

Maximum power dissipation

P_D

1.25 ^{b, c}

0.8 ^{b, c}

-55 to +150

Operating junction and storage temperature range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient ^{b, d}

t  5 s

Steady state

100

°C/W

Maximum junction-to-foot (drain)

Notes

R_thJF

a. Based on T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 5 s

d. Maximum under steady state conditions is 166 °C/W

S14-0909-Rev. A, 28-Apr-14

Document Number: 62960

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与Si2392ADS相关器件

型号	品牌	获取价格	描述	数据表
SI2392ADS-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 3.1A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
Si2392BDS	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
Si2393DS	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI2393DS-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor,
SI2399DS	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SI2399DS (KI2399DS)	KEXIN	获取价格	P-Channel MOSFET
SI2399DS-T1-GE3	VISHAY	获取价格	Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R
SI2400	ETC	获取价格	V.22BIS ISOMODEM⑩ WITH INTEGRATED GLOBAL DAA
SI2400-BS	SILICON	获取价格	Modem, 2.4kbps Data, PDSO16, SOIC-16
SI2400-FS	SILICON	获取价格	Modem, 2.4kbps Data, PDSO16, ROHS COMPLIANT, SOIC-16