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SI2399DS-T1-GE3 PDF预览

SI2399DS-T1-GE3

更新时间: 2024-11-21 19:50:51
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
10页 215K
描述
Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R

SI2399DS-T1-GE3 技术参数

生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:1.56配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):6 A
最大漏极电流 (ID):6 A最大漏源导通电阻:0.034 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI2399DS-T1-GE3 数据手册

 浏览型号SI2399DS-T1-GE3的Datasheet PDF文件第2页浏览型号SI2399DS-T1-GE3的Datasheet PDF文件第3页浏览型号SI2399DS-T1-GE3的Datasheet PDF文件第4页浏览型号SI2399DS-T1-GE3的Datasheet PDF文件第5页浏览型号SI2399DS-T1-GE3的Datasheet PDF文件第6页浏览型号SI2399DS-T1-GE3的Datasheet PDF文件第7页 
Si2399DS  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
MOSFET PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
ID (A)a  
- 6e  
Qg (Typ.)  
Definition  
0.034 at VGS = - 10 V  
0.045 at VGS = - 4.5 V  
0.067 at VGS = - 2.5 V  
TrenchFET® Power MOSFET  
- 6e  
- 20  
10 nC  
100 % R Tested  
g
- 5.2  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
Load Switch  
PA Switch  
DC/DC Converters  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Top View  
Si2399DS (O1)*  
* Marking Code  
Ordering Information: Si2399DS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
- 20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
12  
- 6e  
TC = 25 °C  
T
C = 70 °C  
A = 25 °C  
- 5.8  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 5.1b, c  
- 4.1b, c  
- 20  
T
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
- 2.1  
Continuous Source-Drain Diode Current  
- 1.0b, c  
2.5  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
1.6  
PD  
Maximum Power Dissipation  
W
1.25b, c  
0.8b, c  
- 55 to 150  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
Symbol  
RthJA  
Typical  
75  
Maximum  
Unit  
5 s  
Steady State  
100  
50  
°C/W  
RthJF  
40  
Notes:  
a. Based on TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under steady state conditions is 166 °C/W.  
e. Package limited.  
Document Number: 67343  
S11-0239-Rev. A, 14-Feb-11  
www.vishay.com  
1

SI2399DS-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
AO3415 AOS

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DMG3415U-7 DIODES

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DMP2035U-7 DIODES

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P-CHANNEL ENHANCEMENT MODE MOSFET

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