5秒后页面跳转
Si2392BDS PDF预览

Si2392BDS

更新时间: 2024-10-31 14:55:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 136K
描述
N-Channel 100 V (D-S) MOSFET

Si2392BDS 数据手册

 浏览型号Si2392BDS的Datasheet PDF文件第2页浏览型号Si2392BDS的Datasheet PDF文件第3页浏览型号Si2392BDS的Datasheet PDF文件第4页浏览型号Si2392BDS的Datasheet PDF文件第5页浏览型号Si2392BDS的Datasheet PDF文件第6页浏览型号Si2392BDS的Datasheet PDF文件第7页 
Si2392BDS  
Vishay Siliconix  
www.vishay.com  
N-Channel 100 V (D-S) MOSFET  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
SOT-23 (TO-236)  
• 100 % Rg and UIS tested  
D
3
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
2
S
APPLICATIONS  
• DC/DC converters / boost converters  
• Load switch  
1
G
D
Top View  
• LED backlighting in LCD TVs  
• Power management for mobile computing  
Marking code: H1  
PRODUCT SUMMARY  
G
VDS (V)  
100  
0.149  
0.180  
2.2  
R
DS(on) max. (Ω) at VGS = 10 V  
DS(on) max. (Ω) at VGS = 4.5 V  
R
S
Qg typ. (nC)  
D (A) a  
N-Channel MOSFET  
I
2.3  
Configuration  
Single  
ORDERING INFORMATION  
Package  
SOT-23  
Lead (Pb)-free and halogen-free  
Si2392BDS-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
100  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
C = 70 °C  
2.3  
T
1.8  
Continuous drain current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
2.0 b, c  
1.6 b, c  
6
A
Pulsed drain current (t = 300 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
1.4  
1 b, c  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
4
L = 0.1 mH  
EAS  
0.8  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
1.7  
1.1  
Maximum power dissipation  
PD  
1.25 b, c  
0.8 b, c  
-55 to +150  
Operating junction and storage temperature range  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
TYPICAL  
MAXIMUM  
UNIT  
Maximum junction-to-ambient b, d  
t 5 s  
Steady state  
75  
40  
100  
75  
°C/W  
Maximum junction-to-foot (drain)  
Notes  
RthJF  
a. Based on TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 5 s  
d. Maximum under steady state conditions is 166 °C/W  
S23-0778-Rev. B, 02-Oct-2023  
Document Number: 62133  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与Si2392BDS相关器件

型号 品牌 获取价格 描述 数据表
Si2393DS VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
SI2393DS-T1-GE3 VISHAY

获取价格

Small Signal Field-Effect Transistor,
SI2399DS VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
SI2399DS (KI2399DS) KEXIN

获取价格

P-Channel MOSFET
SI2399DS-T1-GE3 VISHAY

获取价格

Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R
SI2400 ETC

获取价格

V.22BIS ISOMODEM⑩ WITH INTEGRATED GLOBAL DAA
SI2400-BS SILICON

获取价格

Modem, 2.4kbps Data, PDSO16, SOIC-16
SI2400-FS SILICON

获取价格

Modem, 2.4kbps Data, PDSO16, ROHS COMPLIANT, SOIC-16
SI2400-KS SILICON

获取价格

Modem, 2.4kbps Data, PDSO16, SOIC-16
SI2401 SILICON

获取价格

V.22BIS ISOMODEM㈢ WITH INTEGRATED GLOBAL DAA