Si2392BDS
Vishay Siliconix
www.vishay.com
N-Channel 100 V (D-S) MOSFET
FEATURES
• TrenchFET® Gen IV power MOSFET
SOT-23 (TO-236)
• 100 % Rg and UIS tested
D
3
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
S
APPLICATIONS
• DC/DC converters / boost converters
• Load switch
1
G
D
Top View
• LED backlighting in LCD TVs
• Power management for mobile computing
Marking code: H1
PRODUCT SUMMARY
G
VDS (V)
100
0.149
0.180
2.2
R
DS(on) max. (Ω) at VGS = 10 V
DS(on) max. (Ω) at VGS = 4.5 V
R
S
Qg typ. (nC)
D (A) a
N-Channel MOSFET
I
2.3
Configuration
Single
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and halogen-free
Si2392BDS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
100
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
TC = 25 °C
C = 70 °C
2.3
T
1.8
Continuous drain current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
2.0 b, c
1.6 b, c
6
A
Pulsed drain current (t = 300 μs)
IDM
IS
TC = 25 °C
TA = 25 °C
1.4
1 b, c
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
IAS
4
L = 0.1 mH
EAS
0.8
mJ
W
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
1.7
1.1
Maximum power dissipation
PD
1.25 b, c
0.8 b, c
-55 to +150
Operating junction and storage temperature range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b, d
t ≤ 5 s
Steady state
75
40
100
75
°C/W
Maximum junction-to-foot (drain)
Notes
RthJF
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 166 °C/W
S23-0778-Rev. B, 02-Oct-2023
Document Number: 62133
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000