Si2377EDS
Vishay Siliconix
www.vishay.com
P-Channel 20 V (D-S) MOSFET
FEATURES
SOT-23 (TO-236)
• TrenchFET® power MOSFET
D
3
• 100% Rg tested
• Typical ESD performance 2000 V
• Built in ESD protection with Zener Diode
2
• Material categorization: for definitions of
S
compliance please see www.vishay.com/doc?99912
1
G
Top View
APPLICATIONS
Marking Code: P6
S
• Load switch for
portable devices
PRODUCT SUMMARY
VDS (V)
-20
0.061
0.080
0.110
0.165
7.6
RDS(on) max. (Ω) at VGS = -4.5 V
RDS(on) max. (Ω) at VGS = -2.5 V
RDS(on) max. (Ω) at VGS = -1.8 V
RDS(on) max. (Ω) at VGS = -1.5 V
G
R
Qg typ. (nC)
D (A) a
I
-4.4
D
P-Channel MOSFET
Configuration
Single
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and halogen-free
Si2377EDS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-20
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
8
T
C = 25 °C
C = 70 °C
-4.4
T
3.5
Continuous drain current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
-3.7 b, c
-2.9 b, c
-20
A
Pulsed drain current
IDM
IS
TC = 25 °C
-1.5
-1 b, c
Continuous source-drain diode current
TA = 25 °C
T
C = 25 °C
C = 70 °C
1.8
T
1.1
Maximum power dissipation
PD
W
TA = 25 °C
TA = 70 °C
1.25 b, c
0.8 b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, d
SYMBOL
RthJA
TYPICAL
MAXIMUM
UNIT
t ≤ 5 s
80
55
100
70
°C/W
Maximum junction-to-foot (drain)
Steady state
RthJF
Notes
a. TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 130 °C/W
S10-0542-Rev. A, 08-Mar-10
Document Number: 65905
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000