Si2371EDS
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
PRODUCT SUMMARY
•
•
•
I
D (A)a
- 4.8
- 4.4
- 3.6
100 % Rg Tested
Built-in ESD Protection
VDS (V)
RDS(on) () Max.
0.045 at VGS = - 10 V
0.053 at VGS = - 4.5 V
0.080 at VGS = - 2.5 V
Qg (Typ.)
- Typical ESD Performance 3000 V
- 30
10.6 nC
•
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TO-236
(SOT-23)
APPLICATIONS
• Power Management for Portable and Consumer
- Load Switches
G
1
2
- OVP (Over Voltage Protection) Switch
3
S
D
S
Top View
G
Si2371EDS (E6)*
* Marking Code
D
Ordering Information:
Si2371EDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
- 30
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
12
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
- 4.8
- 3.8
- 3.7b,c
- 2.9b,c
- 20
ID
Continuous Drain Current (TJ = 150 °C)
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
A = 25 °C
- 1.4
- 1b,c
Continuous Source-Drain Diode Current
T
TC = 25 °C
1.7
T
C = 70 °C
A = 25 °C
1.1
PD
Maximum Power Dissipation
W
1b,c
0.6b,c
T
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
RthJA
Typical
100
60
Maximum
130
Unit
t 5 s
Steady State
°C/W
RthJF
75
Notes:
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
Document Number: 63924
S13-0633-Rev. A, 25-Mar-13
www.vishay.com
1
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000