Datasheet > SI2369DS (KI2369DS)

SI2369DS (KI2369DS)

更新时间： 2024-06-27 12:13:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
6页	2172K
描述
P-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI2369DS (KI2369DS) 数据手册

浏览型号SI2369DS (KI2369DS)的Datasheet PDF文件第2页

浏览型号SI2369DS (KI2369DS)的Datasheet PDF文件第3页

浏览型号SI2369DS (KI2369DS)的Datasheet PDF文件第4页

浏览型号SI2369DS (KI2369DS)的Datasheet PDF文件第5页

浏览型号SI2369DS (KI2369DS)的Datasheet PDF文件第6页

SMD Type

MOSFET

P-Channel MOSFET

SI2369DS (KI2369DS)

SOT-23

Unit: mm

■ Features

+0.1

-0.1

2.9

0.4

+0.1

-0.1

● VDS (V) =-30V

● ID =-7.6A (V^GS=±20V)

● R^DS(ON)＜ 29mΩ (VGS =-10V)

● R^DS(ON)＜ 34mΩ (VGS =-6V)

● R^DS(ON)＜ 40mΩ (VGS =-4.5V)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-30

Unit

Gate-Source Voltage

±20

-7.6

-6.1

=25℃

=72℃

Continuous Drain Current (TJ=150℃)

Pulsed Drain Current (t=100us)

Power Dissipation

=25℃^*1*2

=70℃^*1*2

-5.4

-4.3

-80

2.5

=25℃

=70℃

1.6

=25℃^*1*2

=70℃^*1*2

t≤5S

1.25

0.8

Thermal Resistance.Junction- to-Ambient^*1*3

Thermal Resistance.Junction- to-Foot

thJA

thJC

100

℃/W

Junction Temperature

150

℃

Junction Storage Temperature Range

stg

-55 to 150

Notes:

*1.. Surface mounted on 1" x 1" FR4 board.

*2.. t = 5 s.

*3.. Maximum under steady state conditions is 166 °C/W.

www.kexin.com.cn

12 3 4 5 6

中文翻译

下载PDF

与SI2369DS (KI2369DS)相关器件

型号	品牌	获取价格	描述	数据表
Si2371EDS	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI2371EDS-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
SI2372DS (KI2372DS)	KEXIN	获取价格	N-Channel MOSFET
Si2374DS	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFET
Si2377EDS	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SI2377EDS (KI2377EDS)	KEXIN	获取价格	P-Channel MOSFET
Si2387DS	VISHAY	获取价格	P-Channel 80 V (D-S) MOSFET
SI2392	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;
Si2392ADS	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SI2392ADS-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 3.1A I(D), 100V, 1-Element, N-Channel, Silicon, Meta