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SI2367DS

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SI2367DS 数据手册

SPICE Device Model Si2367DS

Vishay Siliconix

P-Channel 20 V (D-S) MOSFET

DESCRIPTION

CHARACTERISTICS

The attached SPICE model describes the typical electrical

characteristics of the p-channel vertical DMOS. The

subcircuit model is extracted and optimized over the

- 55 °C to + 125 °C temperature ranges under the pulsed

0 V to 5 V gate drive. The saturated output impedance is best

fit at the gate bias near the threshold voltage. A novel

gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence

difficulties of the switched C_gdmodel. All model parameter

values are optimized to provide a best fit to the measured

electrical data and are not intended as an exact physical

interpretation of the device.

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the - 55 °C to + 125 °C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse

Recovery Characteristics

SUBCIRCUIT MODEL SCHEMATIC

DBD

–

ETCV

Note

This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to

the appropriate datasheet of the same number for guaranteed specification limits.

Document Number: 65140

S09-1760-Rev. A, 14-Sep-09

www.vishay.com

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