Si2369BDS
Vishay Siliconix
www.vishay.com
P-Channel 30 V (D-S) MOSFET
FEATURES
SOT-23 (TO-236)
• TrenchFET® Gen IV p-channel power MOSFET
D
3
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
S
S
APPLICATIONS
1
G
• Load switch
Top View
• Circuit protection
G
Marking code: G7
• Motor drive control
PRODUCT SUMMARY
VDS (V)
-30
0.0270
0.0390
6.2
R
R
DS(on) max. () at VGS = 10 V
DS(on) max. () at VGS = 4.5 V
D
P-Channel MOSFET
Qg typ. (nC)
D (A) a, e
I
-7.5
Configuration
Single
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and halogen-free
Si2369BDS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-30
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
-20 / +16
-7.5 e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
-6.3
Continuous drain current (TJ = 150 °C)
ID
-5.6 b, c
-4.4 b, c
-50
A
Pulsed drain current (t = 100 μs)
IDM
IS
TC = 25 °C
-2.1
-1.1 b, c
Continuous source-drain diode current
TA = 25 °C
T
C = 25 °C
C = 70 °C
2.5
T
1.6
Maximum power dissipation
PD
W
TA = 25 °C
TA = 70 °C
1.3 b, c
0.8 b, c
-55 to +150
Operating junction and storage temperature range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b
SYMBOL
RthJA
TYPICAL
MAXIMUM
UNIT
t 5 s
75
40
100
50
°C/W
Maximum junction-to-case (drain)
Steady state
RthJF
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 166 °C/W
e. Package limited
S19-0397-Rev. A, 06-May-2019
Document Number: 77098
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000