Datasheet > SI2366DS

SI2366DS

更新时间： 2024-10-30 09:26:11

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N-Channel 30 V (D-S) MOSFET

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Si2366DS

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

5.8

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

0.036 at V_GS= 10 V

0.042 at V_GS= 4.5 V

•

3.2 nC

5.4

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converters, High Frequency Switching

Load Switch

Portable and Consumer Applications

SOT-23

(3)

Marking Code

H6 XXX

Lot Traceability

and Date Code

(1)

Part # Code

Top View

(2)

Ordering Information: Si2366DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

5.8^a

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

4.7

Continuous Drain Current (T_J= 150 °C)

I_D

4.5^{b, c}

3.6^{b, c}

Pulsed Drain Current (t = 300 µs)

I_DM

I_S

_C= 25 °C

1.75

1.04^{b, c}

Continuous Source-Drain Diode Current

T_A= 25 °C

_C= 25 °C

_C= 70 °C

_A= 25 °C

2.1

1.3

Maximum Power Dissipation

P_D

1.25^{b, c}

0.8^{b, c}

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

100

Unit

t ≤ 5 s

Steady State

R_thJA

R_thJF

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

Document Number: 67509

S11-0612-Rev. A, 04-Apr-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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