Datasheet > RN2108MFV(TL3PAV)

RN2108MFV(TL3PAV)

更新时间： 2024-11-15 05:36:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	195K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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RN2107MFV∼RN2109MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2107MFV, RN2108MFV, RN2109MFV

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

Ultra-small package, suited to very high density mounting

1.2±0.05

0.8±0.05

Incorporating a bias resistor into the transistor reduces the number of parts, so

enabling the manufacture of ever more compact equipment and lowering

assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN1107MFV~RN1109MFV

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2107MFV

RN2108MFV

RN2109MFV

1. BASE

VESM

2. EMITTER

3. COLLECTOR

JEDEC

JEITA

―

2-1L1A

TOSHIBA

Absolute Maximum Ratings (Ta = 25°C)

Weight: 0.0015 g (typ.)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2107MFV to

RN2109MFV

Collector-emitter voltage

RN2107MFV

RN2108MFV

RN2109MFV

−6

Emitter-base voltage

−7

EBO

−15

Collector current

−100

150

°C

RN2107MFV

RN2109MFV

Collector power dissipation

Junction temperature

Storage temperature range

P (Note 1)

150

stg

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

0.5

0.45

1.15

0.4

0.45

Start of commercial production

2005-02

0.4

2014-03-01

12 3 4 5 6

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与RN2108MFV(TL3PAV)相关器件

型号	品牌	获取价格	描述	数据表
RN2108MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 100mA -50volts 3Pin 22K x 47Kohms
RN2109	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2109(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
RN2109(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
RN2109,LF(CT	TOSHIBA	获取价格	暂无描述
RN2109ACT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2109CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2109CT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883
RN2109F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2109F(F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416

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