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RN1107CT PDF预览

RN1107CT

更新时间： 2024-11-21 11:58:59
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器开关
页数 文件大小 规格书
6页 157K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

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中文翻译

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RN1107CT 技术参数

生命周期：Lifetime Buy包装说明：CHIP CARRIER, R-XBCC-N3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.7其他特性：BUILT-IN BIAS RESISTOR RATIO IS 4.7
外壳连接：COLLECTOR最大集电极电流 (IC)：0.05 A
集电极-发射极最大电压：20 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：120JESD-30 代码：R-XBCC-N3
元件数量：1端子数量：3
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

RN1107CT 数据手册

 浏览型号RN1107CT的Datasheet PDF文件第2页浏览型号RN1107CT的Datasheet PDF文件第3页浏览型号RN1107CT的Datasheet PDF文件第4页浏览型号RN1107CT的Datasheet PDF文件第5页浏览型号RN1107CT的Datasheet PDF文件第6页 
RN1107CT ~ RN1109CT  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1107CT,RN1108CT,RN1109CT  
Switching Applications  
Unit: mm  
Inverter Circuit Applications  
0.6±0.05  
Interface Circuit Applications  
0.5±0.03  
Driver Circuit Applications  
３
•
Incorporating a bias resistor into a transistor reduces the number of  
parts, which enable the manufacture of ever more compact  
equipment and saves assembly cost.  
１
２
•
Complementary to RN2107CT to RN2109CT  
0.05±0.03  
0.35±0.02  
0.15±0.03  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
1.BASE  
2.EMITTER  
3.COLLECTOR  
RN1107CT  
RN1108CT  
RN1109CT  
10  
22  
47  
47  
47  
22  
R1  
B
CST3  
JEDEC  
JEITA  
―
―
E
TOSHIBA  
2-1J1A  
Weight: 0.75 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
20  
V
V
CBO  
CEO  
RN1107CT to RN1109CT  
Collector-emitter voltage  
20  
RN1107CT  
6
Emitter-base voltage  
V
V
RN1108CT  
RN1109CT  
7
15  
EBO  
Collector current  
I
50  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
50  
C
RN1107CT to RN1109CT  
T
150  
j
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-04-13  
123456

中文翻译

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
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