Datasheet > RN1107CT

RN1107CT

更新时间： 2024-11-02 11:58:59

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器开关
页数	文件大小	规格书
6页	157K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

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中文翻译

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技术参数
数据手册

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RN1107CT 技术参数

生命周期：	Lifetime Buy	包装说明：	CHIP CARRIER, R-XBCC-N3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.7	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 4.7
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.05 A
集电极-发射极最大电压：	20 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	120	JESD-30 代码：	R-XBCC-N3
元件数量：	1	端子数量：	3
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

RN1107CT 数据手册

RN1107CT ~ RN1109CT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1107CT,RN1108CT,RN1109CT

Switching Applications

Unit: mm

Inverter Circuit Applications

0.6±0.05

Interface Circuit Applications

0.5±0.03

Driver Circuit Applications

３

•

Incorporating a bias resistor into a transistor reduces the number of

parts, which enable the manufacture of ever more compact

equipment and saves assembly cost.

１

２

•

Complementary to RN2107CT to RN2109CT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

2.EMITTER

3.COLLECTOR

RN1107CT

RN1108CT

RN1109CT

CST3

JEDEC

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1107CT to RN1109CT

Collector-emitter voltage

RN1107CT

Emitter-base voltage

RN1108CT

RN1109CT

EBO

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1107CT to RN1109CT

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-04-13

12 3 4 5 6

中文翻译

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与RN1107CT相关器件

型号	品牌	获取价格	描述	数据表
RN1107F	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
RN1107FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1107FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP Genera
RN1107MFV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, VESM, 2-1L1A, 3 PI
RN1107MFV(TL3MAA)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1107MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 100mA 50volts 3Pin 10K x 47Kohms
RN1108	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1108(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN1108(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN1108(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General

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