Datasheet > PMEG3010BEP-Q

PMEG3010BEP-Q

更新时间： 2024-09-16 11:13:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	249K
描述
30 V, 1 A low VF Schottky barrier rectifierProduction

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PMEG3010BEP-Q 数据手册

PMEG3010BEP-Q

30 V, 1 A low VF Schottky barrier rectifier

20 February 2023

Product data sheet

1. General description

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in

a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Average forward current: I_F(AV)≤ 1 A

•

Reverse voltage: V_R≤ 30 V

Low forward voltage

High power capability due to clip-bond technology

Small and flat lead SMD plastic package

Suitable for both reflow and wave soldering

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low voltage rectification

High efficiency DC-to-DC conversion

Switch Mode Power Supply (SMPS)

Reverse polarity protection

Low power consumption applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward

current

δ = 0.5; f = 20 kHz; square wave; T_sp

140 °C

≤

V_R

V_F

I_R

reverse voltage

forward voltage

reverse current

T_j= 25 °C

I_F= 1 A; T_j= 25 °C

V_R= 30 V; T_j= 25 °C

405

450

µA

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode[1]

anode

Simplified outline

Graphic symbol

sym001

CFP5 (SOD128)

[1] The marking bar indicates the cathode.

12 3 4 5 6 7...12

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