Datasheet > PMEG3010EH-Q

PMEG3010EH-Q

更新时间： 2024-09-17 17:00:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	177K
描述
1 A very low VF Schottky barrier rectifierProduction

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PMEG3010EH-Q 数据手册

PMEG3010EH-Q

1 A very low VF Schottky barrier rectifier

16 October 2023

Product data sheet

1. General description

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in

SOD123F small Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Forward current: I_F≤ 1 A

•

Reverse voltage: V_R≤ 30 V

Very low forward voltage

Small SMD plastic packages

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low voltage rectification

High efficiency DC-to-DC conversion

Switch mode power supply

Reverse polarity protection

Low power consumption applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F

forward current

reverse voltage

forward voltage

T_sp≤ 55 °C

V_R

V_F

I_F= 1 A; pulsed; t_p≤ 300 µs; δ ≤ 0.02;

T_amb= 25 °C

450

560

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode

Simplified outline

Graphic symbol

anode

sym001

SOD123F

12 3 4 5 6 7 8

中文翻译

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